Datasheet4U Logo Datasheet4U.com

FDS6690A - N-Channel MOSFET

Description

and yet maintain superior switching performance.

Features

  • 11 A, 30 V. RDS(ON) = 12.5 mΩ @ VGS = 10 V RDS(ON) = 17.0 mΩ @ VGS = 4.5 V.
  • Fast switching speed.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability DDDD DD DD SO-8 Pin 1 SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed (Not.

📥 Download Datasheet

Datasheet Details

Part number FDS6690A
Manufacturer onsemi
File Size 314.30 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS6690A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDS6690A Single N-Channel / Logic Level / PowerTrench MOSFET Fairchild Semiconductor
FDS6690AS 30V N-Channel PowerTrench SyncFET Fairchild Semiconductor
FDS6690 Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET Fairchild Semiconductor
FDS6690S 30V N-Channel PowerTrench SyncFET Fairchild Semiconductor
FDS6692 30V N-Channel PowerTrench MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDS6690AS N-Channel MOSFET
FDS6699S N-Channel MOSFET
FDS6612A N-Channel MOSFET
FDS6673BZ P-Channel MOSFET
FDS6673BZ-F085 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDS6690A FDS6690A Single N-Channel, Logic-Level, PowerTrench® MOSFET General Description This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 11 A, 30 V. RDS(ON) = 12.5 mΩ @ VGS = 10 V RDS(ON) = 17.0 mΩ @ VGS = 4.
Published: |